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IRF6713STRPBF N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc)

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IRF6713STRPBF N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc)

Brand Name : original

Model Number : IRF6713STRPBF

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Technology : MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs : 3mOhm @ 22A, 10V

Drain to Source Voltage (Vdss) : 25 V

Current - Continuous Drain (Id) @ 25°C : 22A (Ta), 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs : 32 nC @ 4.5 V

Vgs(th) (Max) @ Id : 2.4V @ 50µA

Input Capacitance (Ciss) (Max) @ Vds : 2880 pF @ 13 V

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IRF6713STRPBF N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc)

Specifications of IRF6713STRPBF

TYPE DESCRIPTION
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 13 V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ SQ
Package / Case DirectFET™ Isometric SQ

Features of IRF6713STRPBF


 RoHS Compliant Containing No Lead and Bromide 
 Low Profile (<0.7 mm)
 Dual Sided Cooling Compatible 
 Ultra Low Package Inductance
 Optimized for High Frequency Switching 
 Ideal for CPU Core DC-DC Converters
 Optimized for both Sync.FET and some Control FET application
 Low Conduction and Switching Losses
 Compatible with existing Surface Mount Techniques 
 100% Rg tested

Descriptions of IRF6713STRPBF


The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.


Environmental & Export Classifications of IRF6713STRPBF

ATTRIBUTE DESCRIPTION
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095


IRF6713STRPBF N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc)


Quality IRF6713STRPBF N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc) wholesale

IRF6713STRPBF N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc) Images

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