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IRFR3710ZTRPBF Electronic Components N-Channel MOSFET 100 V 42A (Tc) 140W (Tc) D-Pak

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IRFR3710ZTRPBF Electronic Components N-Channel MOSFET 100 V 42A (Tc) 140W (Tc) D-Pak

Brand Name : original

Model Number : IRFR3710ZTRPBF

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 1000

Delivery Time : 3-5ddays

Packaging Details : carton box

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 100 V

Current - Continuous Drain (Id) @ 25°C : 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 18mOhm @ 33A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 100 nC @ 10 V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2930 pF @ 25 V

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IRFR3710ZTRPBF Electronic Components N-Channel 100 V 42A (Tc) 140W (Tc) D-Pak

MOSFET N-CH 100V 42A DPAK

Specifications of IRFR3710ZTRPBF

TYPE DESCRIPTION
Category Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2930 pF @ 25 V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IRFR3710

Features of IRFR3710ZTRPBF


* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Multiple Package Options
* Lead-Free

Applications of IRFR3710ZTRPBF


This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.


Environmental & Export Classifications of IRFR3710ZTRPBF

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

IRFR3710ZTRPBF Electronic Components N-Channel MOSFET 100 V 42A (Tc) 140W (Tc) D-Pak


Product Tags:

IRFR3710ZTRPBF

      

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100 V 42A N-Channel MOSFET

      
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