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AT28C040-20FI EEPROM Memory IC 4Mbit Parallel 200 Ns 32-FlatPack Bottom-Brazed

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AT28C040-20FI EEPROM Memory IC 4Mbit Parallel 200 Ns 32-FlatPack Bottom-Brazed

Brand Name : original

Model Number : AT28C040-20FI

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Memory Type : Non-Volatile

Memory Format : EEPROM

Memory Size : 4Mbit

Memory Organization : 512K x 8

Memory Interface : Parallel

Write Cycle Time - Word, Page : 10ms

Access Time : 200 ns

Voltage - Supply : 4.5V ~ 5.5V

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AT28C040-20FI EEPROM Memory IC 4Mbit Parallel 200 ns 32-FlatPack Bottom-Brazed

Specifications of AT28C040-20FI

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Memory
Mfr Microchip Technology
Series -
Package Tube
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 10ms
Access Time 200 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 32-CFlatPack
Supplier Device Package 32-FlatPack, Ceramic Bottom-Brazed
Base Product Number AT28C040

Specifications of AT28C040-20FI

• Read Access Time – 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 256 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 256 Byte Page Write Operation
• Low Power Dissipation
– 50 mA Active Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout

Introduction of AT28C040-20FI


The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 440 mW.

Environmental & Export Classifications of AT28C040-20FI

ATTRIBUTE DESCRIPTION
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN 3A001A2C
HTSUS 8542.32.0051

AT28C040-20FI EEPROM Memory IC 4Mbit Parallel 200 Ns 32-FlatPack Bottom-Brazed


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AT28C040-20FI EEPROM Memory IC

      
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