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TC58NVG1S3HTA00 FLASH NAND SLC Memory IC 2Gbit Parallel 25 Ns 48-TSOP

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TC58NVG1S3HTA00 FLASH NAND SLC Memory IC 2Gbit Parallel 25 Ns 48-TSOP

Brand Name : original

Model Number : TC58NVG1S3HTA00

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Memory Type : Non-Volatile

Memory Format : FLASH

Technology : FLASH - NAND (SLC)

Memory Size : 2Gbit

Memory Organization : 256M x 8

Memory Interface : Parallel

Write Cycle Time - Word, Page : 25ns

Access Time : 25 ns

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TC58NVG1S3HTA00 FLASH - NAND (SLC) Memory IC 2Gbit Parallel 25 ns 48-TSOP


Specifications of TC58NVG1S3HTA00

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Memory
Mfr Kioxia America, Inc.
Series -
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Base Product Number TC58NVG1

Features of TC58NVG1S3HTA00


* Organization
- Memory cell array 2176  128K  8
- Register 2176  8
- Page size 2176 bytes
- Block size (128K  8K) bytes
* Modes
- Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
- Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
* Mode control
- Serial input/output
- Command control
* Number of valid blocks
- Min 2008 blocks
- Max 2048 blocks
* Power supply
- VCC  2.7V to 3.6V
* Access time
- Cell array to register 25 s max
- Read Cycle Time 25 ns min (CL=50pF)
* Program/Erase time
- Auto Page Program 300 s/page typ.
- Auto Block Erase 2.5 ms/block typ.
* Operating current
- Read (25 ns cycle) 30 mA max
- Program (avg.) 30 mA max
- Erase (avg.) 30 mA max
- Standby 50 A max

Introductions of TC58NVG1S3HTA00


The TC58NVG1S3HTA00 is a single 3.3V 2Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes  64 pages  2048 blocks.


Environmental & Export Classifications of TC58NVG1S3HTA00

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991A2
HTSUS 8542.32.0071

TC58NVG1S3HTA00 FLASH NAND SLC Memory IC 2Gbit Parallel 25 Ns 48-TSOP


Product Tags:

TC58NVG1S3HTA00

      

48-TSOP memory ic

      
Quality TC58NVG1S3HTA00 FLASH NAND SLC Memory IC 2Gbit Parallel 25 Ns 48-TSOP wholesale

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